NPN Transistor 60V/3A, VCEsat=300mV, P=2W, SOT-223

PNP Transistor 60V/3A, VCEsat=150mV, P=2W, SOT-223

Switching NPN Transistor 40V/200mA, P=1.5W, SOT-223

N MOSFET 80A-40V, rDS(on)=0.0031 Ohm, 110W, TO-252 (Dpak)

N MOSFET 150A - 24v, rDS(on)=0.0033 Ohm, TO-252

Dual N+P MOSFET 5.9/4.9A - 30v SOIC-8

P MOSFET Transistor -50v/-0.13A, SOT-23

N MOSFET Transistor 60v/0.13A, SOT-23

Dual P MOSFET 4.9A - 30v SOIC-8

N MOSFET 110A - 40v, rDS(on)=0.0028 Ohm, TO-263

N MOSFET 50A - 60V TO-263

HEXFET Power N-MOSFET+Di 200V/18A, Rds=0,15 Ohm, 150W D2Pak

N MOSFET 34A - 22v TO-252

N MOSFET 85A - 30v TO-263

N MOSFET 1,6A - 600V TO-252 DPak

N MOSFET 64A - 30v, TO-263

P MOSFET -74A - -55v TO-263

N MOSFET 9A - 30v SOIC-8

Transistor công suất nhỏ 2N2222, 2SA812, 2N3904, 2N3906, C1815, A1015...SOT-23

Dual N-Channel MOSFET, 60v/4.5A, Rds=56m Ohm, SOIC-8

Logic gate SMD Power N-MOSFET, 17.7A - 100v, Very Fast switching, Rds(ON) = 100 mOhm @ Vgs=10v, Pd = 35W, 100c=4.500đ/c, TO-252

Fast IGBT (5Khz Hard, >20Khz soft), Vce=600v, Vce(on) = 1.82v, Ic=12A (pulse 44A), Pd=66w, (TO-252)

PNP Low VceSAT transistor, 80v/4A, Rce=54mOhm, Ft=150MHz VceSat=170mV@4A (55mV@1A) (SOT-89, W1Z), pair w PBSS4480X-NPN

NPN Low VceSAT transistor, 80v/4A, Rce=54mOhm, Ft=150MHz VceSat=170mV@4A (55mV@1A) (SOT-89, W1Y), pair w PBSS5480X-PNP

NPN Low VceSAT transistor, 60v/1A, Rce=250mOhm, Ft=220MHz VceSat=200mV@1A (110mV@0.5A) (SOT-23, WU5), pair w PBSS5160T-PNP

NPN transistor, 150v, 600mA, Bandwidth 300MHz (SOT-23 Marking "G1")-Pair with 2N5401

PNP transistor, 150v, 600mA, Bandwidth 300MHz (SOT-23 Marking "2L")- Pair with 2N5551

Audio transistor PNP, 30V-3A, hFE up to 400, Ft 80MHz, Pair with 2SD882, SOT-89 (100c=1,200đ/c)

Audio transistor NPN, 30V-3A, hFE up to 400, Ft 90MHz, Pair with 2SB772, SOT-89 (100c=1,200đ/c)

P-MOSFET 30V-3A, Rds on = 0.08 Ohm, 1.25W Ton = 10nS, Toff = 27nS, SOT-23 (100c=80,000 đ)

N-MOSFET 40V-50A, 8.5mW, 44W, Pulse 100A, TO-252

N-MOSFET, 20V, 2.8A, Rds=60 mOhm (Vgs 2.5-5V, phù hợp các mạch VÐK), SOT-23, >100c = 2,000 đ/c, >1000c = 1,800 đ/c

NPN transistor, Vce=45v, Ic=500mA (peak 1A), Hfe= 250-600, >100c=800đ/c, SOT-23

Dual N-MOSFET, 30v-8A, Rds=20.5 mili Ohm, with Shottky diode, SOIC-8

N-MOSFET, Vds=30V, Rds=6.5mOhm, Id max= 86A, Pmax=79W, TO-252

P Mosfet transistor, input Logic level, Fast switching, 12V - 750mA, SOT-23 >100c = 1.500 đ/c